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| HiPerFETTM Power MOSFETs Q-Class Single Die MOSFET N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr Preliminary data sheet Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg VISOL Md Weight 50/60 Hz, RMS IISOL 1 mA t = 1 min t=1s TC = 25C TC = 25C IS IDM, di/dt 100 A/s, VDD VDSS, TJ 150C, RG = 2 TC = 25C Test Conditions TJ = 25C to 150C TJ = 25C to 150C; RGS = 1 M Continuous Transient TC = 25C TC = 25C, pulse width limited by TJM IXFN 27N80Q VDSS ID25 RDS(on) D = 800 V = 27 A = 320 m G S S Maximum Ratings 800 800 20 30 27 108 27 60 2.5 5 520 -55 ... +150 150 -55 ... +150 2500 3000 V V V V A A A mJ J V/ns W C C C V~ V~ miniBLOC, SOT-227 B (IXFN) E153432 S G S D G = Gate S = Source D = Drain TAB = Drain Either Source terminal at miniBLOC can be used as Main or Kelvin Source Features * International standard package * Epoxy meet * miniBLOC with Aluminium nitride isolation UL 94 V-0, flammability classification Mounting torque Terminal connection torque 1.5/13 Nm/lb.in. 1.5/13 Nm/lb.in. 30 g * IXYS advanced low Qg process * Rugged polysilicon gate cell structure * Unclamped Inductive Switching (UIS) * Low package inductance * Fast intrinsic Rectifier Applications rated Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 800 2.5 4.5 100 TJ = 25C TJ = 125C 100 2 0.32 V V nA A mA VDSS VGH(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 250 A V DS = VGS, ID = 4 mA V GS = 20 VDC, VDS = 0 V DS = VDSS V GS = 0 V V GS = 10 V, ID = 0.5 ID25 Note 1 * DC-DC converters * Battery chargers * Switched-mode and resonant-mode * DC choppers * Temperature and lighting controls Advantages power supplies * Easy to mount * Space savings * High power density (c) 2001 IXYS All rights reserved 98813 (04/01) IXFN 27N80Q Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 20 27 7600 V GS = 0 V, VDS = 25 V, f = 1 MHz 750 120 20 V GS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25 RG = 1 (External), 28 50 13 170 V GS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25 47 65 0.24 0.05 S pF pF pF ns ns ns ns nC nC nC K/W K/W M4 screws (4x) supplied Dim. A B C D E F G H J K L M N O P Q R S T U Millimeter Min. Max. 31.50 7.80 4.09 4.09 4.09 14.91 30.12 38.00 11.68 8.92 0.76 12.60 25.15 1.98 4.95 26.54 3.94 4.72 24.59 -0.05 31.88 8.20 4.29 4.29 4.29 15.11 30.30 38.23 12.22 9.60 0.84 12.85 25.42 2.13 5.97 26.90 4.42 4.85 25.07 0.1 Inches Min. 1.240 0.307 0.161 0.161 0.161 0.587 1.186 1.496 0.460 0.351 0.030 0.496 0.990 0.078 0.195 1.045 0.155 0.186 0.968 -0.002 Max. 1.255 0.323 0.169 0.169 0.169 0.595 1.193 1.505 0.481 0.378 0.033 0.506 1.001 0.084 0.235 1.059 0.174 0.191 0.987 0.004 miniBLOC, SOT-227 B gfs Ciss Coss Crss td(on) tr td(off) tf Qg(on) Qgs Qgd RthJC RthCK V DS = 10 V; ID = 0.5 ID25, pulse test Source-Drain Diode Symbol IS ISM VSD t rr QRM IRM Note 1: Test Conditions V GS = 0 V Repetitive; pulse width limited by TJM IF = IS, VGS = 0 V, Note 1 Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 27 108 1.5 250 1.3 8 A A V ns C A IF = IS, -di/dt = 100 A/s, VR = 100 V Pulse test, t 300 s, duty cycle d 2 % IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715 5,381,025 |
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